Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device
文献类型：专利
| 作者 | HUANG, SHIH CHENG; TU, PO MIN; YEH, YING CHAO; LIN, WEN YU; WU, PENG YI; CHAN, SHIH HSIUNG |
| 发表日期 | 2012-06-19 |
| 专利号 | US8202752 |
| 著作权人 | ADVANCED OPTOELECTRONIC TECHNOLOGY INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device |
| 英文摘要 | A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps. |
| 公开日期 | 2012-06-19 |
| 申请日期 | 2009-06-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38501]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ADVANCED OPTOELECTRONIC TECHNOLOGY INC. |
| 推荐引用方式 GB/T 7714 | HUANG, SHIH CHENG,TU, PO MIN,YEH, YING CHAO,et al. Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device. US8202752. 2012-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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