Group III nitride semiconductor multilayer structure and production method thereof
文献类型：专利
| 作者 | HANAWA, KENZO; SASAKI, YASUMASA |
| 发表日期 | 2012-07-03 |
| 专利号 | US8211727 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride semiconductor multilayer structure and production method thereof |
| 英文摘要 | According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer. |
| 公开日期 | 2012-07-03 |
| 申请日期 | 2009-07-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38503]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | HANAWA, KENZO,SASAKI, YASUMASA. Group III nitride semiconductor multilayer structure and production method thereof. US8211727. 2012-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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