Method for producing nitride semiconductor optical device and epitaxial wafer
文献类型：专利
| 作者 | AKITA, KATSUSHI; ENYA, YOHEI; KYONO, TAKASHI; SUMITOMO, TAKAMICHI; YOSHIZUMI, YUSUKE; UENO, MASAKI; NAKAMURA, TAKAO |
| 发表日期 | 2012-05-22 |
| 专利号 | US8183071 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing nitride semiconductor optical device and epitaxial wafer |
| 英文摘要 | In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature TW. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures TW to TB before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature TB. |
| 公开日期 | 2012-05-22 |
| 申请日期 | 2009-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38505]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | AKITA, KATSUSHI,ENYA, YOHEI,KYONO, TAKASHI,et al. Method for producing nitride semiconductor optical device and epitaxial wafer. US8183071. 2012-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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