Method for blocking dislocation propagation of semiconductor
文献类型：专利
| 作者 | WU, PENG YI; HUANG, SHIH CHENG; TU, PO MIN; YEH, YING CHAO; LIN, WEN YU; CHAN, SHIH HSIUNG |
| 发表日期 | 2011-05-17 |
| 专利号 | US7943494 |
| 著作权人 | ADVANCED OPTOELECTRONIC TECHNOLOGY INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for blocking dislocation propagation of semiconductor |
| 英文摘要 | The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects. |
| 公开日期 | 2011-05-17 |
| 申请日期 | 2009-10-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38507]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ADVANCED OPTOELECTRONIC TECHNOLOGY INC. |
| 推荐引用方式 GB/T 7714 | WU, PENG YI,HUANG, SHIH CHENG,TU, PO MIN,et al. Method for blocking dislocation propagation of semiconductor. US7943494. 2011-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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