Long-wavelength resonant-cavity light-emitting diode
文献类型：专利
| 作者 | KOVSH, ALEXEY; KRESTNIKOV, IGOR; MIKHRIN, SERGEY; LIVSHITS, DANIIL |
| 发表日期 | 2012-04-03 |
| 专利号 | US8148186 |
| 著作权人 | INNOLUME GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Long-wavelength resonant-cavity light-emitting diode |
| 英文摘要 | An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 15-35 μm. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications. |
| 公开日期 | 2012-04-03 |
| 申请日期 | 2009-11-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38510]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INNOLUME GMBH |
| 推荐引用方式 GB/T 7714 | KOVSH, ALEXEY,KRESTNIKOV, IGOR,MIKHRIN, SERGEY,et al. Long-wavelength resonant-cavity light-emitting diode. US8148186. 2012-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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