III-V nitride substrate boule and method of making and using the same
文献类型：专利
| 作者 | VAUDO, ROBERT P.; FLYNN, JEFFREY S.; BRANDES, GEORGE R.; REDWING, JOAN M.; TISCHLER, MICHAEL A. |
| 发表日期 | 2011-03-29 |
| 专利号 | US7915152 |
| 著作权人 | CREE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-V nitride substrate boule and method of making and using the same |
| 英文摘要 | A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer. |
| 公开日期 | 2011-03-29 |
| 申请日期 | 2010-02-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38513]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | VAUDO, ROBERT P.,FLYNN, JEFFREY S.,BRANDES, GEORGE R.,et al. III-V nitride substrate boule and method of making and using the same. US7915152. 2011-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。