Compound semiconductor substrate, semiconductor device, and processes for producing them
文献类型：专利
| 作者 | ISHIBASHI, KEIJI; NAKANISHI, FUMITAKE |
| 发表日期 | 2011-01-04 |
| 专利号 | US7863609 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor substrate, semiconductor device, and processes for producing them |
| 英文摘要 | A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced. |
| 公开日期 | 2011-01-04 |
| 申请日期 | 2010-04-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38520]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | ISHIBASHI, KEIJI,NAKANISHI, FUMITAKE. Compound semiconductor substrate, semiconductor device, and processes for producing them. US7863609. 2011-01-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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