Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
文献类型：专利
| 作者 | KRYLIOUK, OLGA; MELNIK, YURIY; KOJIRI, HIDEHIRO; ISHIKAWA, TETSUYA |
| 发表日期 | 2013-08-13 |
| 专利号 | US8507304 |
| 著作权人 | APPLIED MATERIALS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
| 英文摘要 | A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation. |
| 公开日期 | 2013-08-13 |
| 申请日期 | 2010-07-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38527]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED MATERIALS, INC. |
| 推荐引用方式 GB/T 7714 | KRYLIOUK, OLGA,MELNIK, YURIY,KOJIRI, HIDEHIRO,et al. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE). US8507304. 2013-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。