Optical semiconductor device and method of manufacturing optical semiconductor device
文献类型：专利
| 作者 | TAKEUCHI, TATSUYA |
| 发表日期 | 2013-06-04 |
| 专利号 | US8455281 |
| 著作权人 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device and method of manufacturing optical semiconductor device |
| 英文摘要 | A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×1019 nm/cm3 or less. |
| 公开日期 | 2013-06-04 |
| 申请日期 | 2011-04-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38547]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 推荐引用方式 GB/T 7714 | TAKEUCHI, TATSUYA. Optical semiconductor device and method of manufacturing optical semiconductor device. US8455281. 2013-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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