Light emitting devices having dopant front loaded tunnel barrier layers
文献类型：专利
| 作者 | CHUA, CHRISTOPHER L.; YANG, ZHIHONG |
| 发表日期 | 2013-01-15 |
| 专利号 | US8354689 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting devices having dopant front loaded tunnel barrier layers |
| 英文摘要 | Light emitting devices described herein include dopant front loaded tunnel barrier layers (TBLs). A front loaded TBL includes a first surface closer to the active region of the light emitting device and a second surface farther from the active region. The dopant concentration in the TBL is higher near the first surface of the TBL when compared to the dopant concentration near the second surface of the TBL. The front loaded region near the first surface of the TBL is formed during fabrication of the device by pausing the growth of the light emitting device before the TBL is formed and flowing dopant into the reaction chamber. After the dopant flows in the reaction chamber during the pause, the TBL is grown. |
| 公开日期 | 2013-01-15 |
| 申请日期 | 2011-04-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38550]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | CHUA, CHRISTOPHER L.,YANG, ZHIHONG. Light emitting devices having dopant front loaded tunnel barrier layers. US8354689. 2013-01-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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