Method of fabricating epitaxial semiconductor devices
文献类型：专利
| 作者 | HORNG, RAY-HUA; TSENG, MING-CHUN |
| 发表日期 | 2014-01-07 |
| 专利号 | US8623669 |
| 著作权人 | NATIONAL CHENG KUNG UNIVERSITY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating epitaxial semiconductor devices |
| 英文摘要 | A method of fabricating epitaxial semiconductor devices includes: (a) forming an etch limiting film that includes a sacrificial layer on an epitaxial substrate; (b) growing epitaxially layers of a semiconductor structure on the sacrificial layer; (c) forming on the semiconductor structure a layer of a device substrate that can be magnetized, and a patterned passage unit that extends from the device substrate to a depth as deep as the sacrificial layer such that a plurality of semiconductor units are defined in the semiconductor structure and the device substrate; and (d) separating the semiconductor units from the epitaxial substrate by etching laterally the sacrificial layer through the patterned passage unit while a magnetic attraction force is applied to the device substrate. |
| 公开日期 | 2014-01-07 |
| 申请日期 | 2011-08-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38560]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL CHENG KUNG UNIVERSITY |
| 推荐引用方式 GB/T 7714 | HORNG, RAY-HUA,TSENG, MING-CHUN. Method of fabricating epitaxial semiconductor devices. US8623669. 2014-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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