Method for fabricating semiconductor lighting chip
文献类型：专利
| 作者 | TU, PO-MIN; HUANG, SHIH-CHENG |
| 发表日期 | 2014-03-04 |
| 专利号 | US8664026 |
| 著作权人 | ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating semiconductor lighting chip |
| 英文摘要 | A method for fabricating a semiconductor lighting chip includes steps of providing a substrate with an epitaxial layer thereon. The epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer successively grown on the substrate. The epitaxial layer has dislocation defects traversing the first semiconductor layer, the active layer and the second semiconductor layer. The epitaxial layer is then subjected to an etching process which remove parts of the second semiconductor layer and the active layer along the dislocation defects to form recesses recessing from the second semiconductor layer to the active layer. Thereafter a first electrode and a second electrode are formed on the first semiconductor layer and the second semiconductor layer, respectively. |
| 公开日期 | 2014-03-04 |
| 申请日期 | 2011-08-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38562]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
| 推荐引用方式 GB/T 7714 | TU, PO-MIN,HUANG, SHIH-CHENG. Method for fabricating semiconductor lighting chip. US8664026. 2014-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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