Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same
文献类型：专利
| 作者 | SONG, JUNE O |
| 发表日期 | 2013-03-26 |
| 专利号 | US8404505 |
| 著作权人 | SAMSUNG DISPLAY CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same |
| 英文摘要 | A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer. |
| 公开日期 | 2013-03-26 |
| 申请日期 | 2012-01-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38592]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG DISPLAY CO., LTD. |
| 推荐引用方式 GB/T 7714 | SONG, JUNE O. Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same. US8404505. 2013-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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