Method of manufacturing ridge-type semiconductor laser
文献类型：专利
| 作者 | YAGI, HIDEKI |
| 发表日期 | 2014-02-04 |
| 专利号 | US8642365 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing ridge-type semiconductor laser |
| 英文摘要 | A method of manufacturing a ridge-type semiconductor laser includes the steps of forming a stacked semiconductor layer including an active layer and an etch stop layer on first and second surfaces of a substrate, etching the stacked semiconductor layer on the second surface, forming a semiconductor portion on the second surface, forming a ridge waveguide portion by etching the stacked semiconductor layer on the first surface to a first depth, forming semiconductor diffraction grating portions by etching the semiconductor portion to a second depth, and forming a diffraction grating section by providing resin diffraction grating portions between the semiconductor diffraction grating portions. The etching of the stacked semiconductor layer on the first surface and the etching of the semiconductor portion are performed simultaneously by using first and second mask portions. |
| 公开日期 | 2014-02-04 |
| 申请日期 | 2012-04-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38596]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YAGI, HIDEKI. Method of manufacturing ridge-type semiconductor laser. US8642365. 2014-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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