Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
文献类型：专利
| 作者 | AKITA, KATSUSHI; ISHIZUKA, TAKASHI; FUJII, KEI; NAGAI, YOUICHI; NAKAHATA, HIDEAKI |
| 发表日期 | 2012-11-13 |
| 专利号 | US8309380 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer |
| 英文摘要 | Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 2 The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7. |
| 公开日期 | 2012-11-13 |
| 申请日期 | 2012-04-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38598]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | AKITA, KATSUSHI,ISHIZUKA, TAKASHI,FUJII, KEI,et al. Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer. US8309380. 2012-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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