Nitride semiconductor structure
文献类型：专利
| 作者 | STRITTMATTER, ANDRE |
| 发表日期 | 2014-02-18 |
| 专利号 | US8652918 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor structure |
| 英文摘要 | A structure method for producing same provides suppressed lattice defects when epitaxially forming nitride layers over non-c-plane oriented layers, such as a semi-polar oriented template layer or substrate. A patterned mask with “window” openings, or trenches formed in the substrate with appropriate vertical dimensions, such as the product of the window width times the cotangent of the angle between the surface normal and the c-axis direction, provides significant blocking of all diagonally running defects during growth. In addition, inclined posts of appropriate height and spacing provide a blocking barrier to vertically running defects is created. When used in conjunction with the aforementioned aspects of mask windows or trenches, the post structure provides significant blocking of both vertically and diagonally running defects during growth. |
| 公开日期 | 2014-02-18 |
| 申请日期 | 2012-05-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38600]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | STRITTMATTER, ANDRE. Nitride semiconductor structure. US8652918. 2014-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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