Semiconductor device structures and the separating methods thereof
文献类型：专利
| 作者 | CHEN, SHIH-I; LIN, CHING-PEI; HSU, TZU-CHIEH; HSU, CHIA-LIANG |
| 发表日期 | 2014-07-01 |
| 专利号 | US8765504 |
| 著作权人 | EPISTAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device structures and the separating methods thereof |
| 英文摘要 | A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures. |
| 公开日期 | 2014-07-01 |
| 申请日期 | 2012-06-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | CHEN, SHIH-I,LIN, CHING-PEI,HSU, TZU-CHIEH,et al. Semiconductor device structures and the separating methods thereof. US8765504. 2014-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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