Photonic quantum ring laser and fabrication method thereof
文献类型：专利
| 作者 | KWON, O DAE; SHIN, MI-HYANG; LEE, SEUNG EUN; JANG, YOUNG-HEUB; KIM, YOUNG CHUN; YOON, JUNHO |
| 发表日期 | 2013-08-20 |
| 专利号 | US8513036 |
| 著作权人 | POSTECH ACADEMY-INDUSTRY FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Photonic quantum ring laser and fabrication method thereof |
| 英文摘要 | A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light. |
| 公开日期 | 2013-08-20 |
| 申请日期 | 2012-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | POSTECH ACADEMY-INDUSTRY FOUNDATION |
| 推荐引用方式 GB/T 7714 | KWON, O DAE,SHIN, MI-HYANG,LEE, SEUNG EUN,et al. Photonic quantum ring laser and fabrication method thereof. US8513036. 2013-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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