Semi-polar nitride-based light emitting structure and method of forming same
文献类型：专利
| 作者 | STRITTMATTER, ANDRE; JOHNSON, NOBLE M.; TEEPE, MARK; CHUA, CHRISTOPHER L.; YANG, ZHIHONG; NORTHRUP, JOHN E. |
| 发表日期 | 2012-12-11 |
| 专利号 | US8330144 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semi-polar nitride-based light emitting structure and method of forming same |
| 英文摘要 | A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer. |
| 公开日期 | 2012-12-11 |
| 申请日期 | 2012-07-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38611]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | STRITTMATTER, ANDRE,JOHNSON, NOBLE M.,TEEPE, MARK,et al. Semi-polar nitride-based light emitting structure and method of forming same. US8330144. 2012-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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