Method of making diode having reflective layer
文献类型：专利
| 作者 | YOO, MYUNG, CHEOL |
| 发表日期 | 2014-06-24 |
| 专利号 | US8759129 |
| 著作权人 | LG INNOTEK CO. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making diode having reflective layer |
| 英文摘要 | A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer. |
| 公开日期 | 2014-06-24 |
| 申请日期 | 2012-07-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38612]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG INNOTEK CO. LTD. |
| 推荐引用方式 GB/T 7714 | YOO, MYUNG, CHEOL. Method of making diode having reflective layer. US8759129. 2014-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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