Method for fabricating semiconductor laser
文献类型：专利
| 作者 | ABE, SHINJI |
| 发表日期 | 2013-10-08 |
| 专利号 | US8551797 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating semiconductor laser |
| 英文摘要 | A method for fabricating a semiconductor laser includes: sequentially forming a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a contact layer of the second conductivity type on a semiconductor substrate; forming a promotion film which contacts the contact layer only in a window region proximate an end plane of the semiconductor laser and absorbs group-III atoms from the contact layer to promote generation of group-III vacancies; implanting ions into the contact layer in the window region to damage the contact layer in the window region; and after forming the promotion film and implanting the ions, heat treating so that the group-III vacancies are diffused and the active layer is disordered in the window region and forms a window structure. |
| 公开日期 | 2013-10-08 |
| 申请日期 | 2012-08-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | ABE, SHINJI. Method for fabricating semiconductor laser. US8551797. 2013-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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