Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method
文献类型：专利
| 作者 | YAMAMOTO, TSUYOSHI; SUDO, HISAO |
| 发表日期 | 2014-05-06 |
| 专利号 | US8716044 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method |
| 英文摘要 | A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer. |
| 公开日期 | 2014-05-06 |
| 申请日期 | 2013-09-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38635]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, TSUYOSHI,SUDO, HISAO. Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method. US8716044. 2014-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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