Epitaxial growth of in-plane nanowires and nanowire devices
文献类型：专利
| 作者 | LEE, SEUNG CHANG; BRUECK, STEVEN R. J. |
| 发表日期 | 2014-07-22 |
| 专利号 | US8785226 |
| 著作权人 | STC.UNM |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial growth of in-plane nanowires and nanowire devices |
| 英文摘要 | Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance. |
| 公开日期 | 2014-07-22 |
| 申请日期 | 2013-09-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38636]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | STC.UNM |
| 推荐引用方式 GB/T 7714 | LEE, SEUNG CHANG,BRUECK, STEVEN R. J.. Epitaxial growth of in-plane nanowires and nanowire devices. US8785226. 2014-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。