Light-emitting diode and method for preparing the same
文献类型：专利
| 作者 | XU, JIN; WANG, JIANGBO; LIU, RONG
|
| 发表日期 | 2015-07-21 |
| 专利号 | US9087933 |
| 著作权人 | HC SEMITEK CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light-emitting diode and method for preparing the same |
| 英文摘要 | A method for preparing a light-emitting diode having a vertical structure by stripping a GaN base epitaxial layer and a sapphire substrate by a wet process, the method including: a) preparing a graphical growth substrate; b) growing a GaN base light-emitting diode epitaxial layer on the graphical growth substrate, the GaN base light-emitting diode epitaxial layer from the bottom to the top successively including a N-type GaN layer and a P-type GaN layer; c) successively forming a transparent and electrically conductive film, an omni-directional reflection layer, an electrically conductive reflection layer, and a passive metal protection layer from the bottom to the top on the GaN base light-emitting diode epitaxial layer; and d) removing the first layer of stable material with a high melting point of the growth substrate by dry etching, exposing the N-type GaN layer, and preparing an N electrode on the N-type GaN layer. |
| 公开日期 | 2015-07-21 |
| 申请日期 | 2014-01-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HC SEMITEK CORPORATION |
| 推荐引用方式 GB/T 7714 | XU, JIN,WANG, JIANGBO,LIU, RONG. Light-emitting diode and method for preparing the same. US9087933. 2015-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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