Strain compensation in transistors
文献类型：专利
| 作者 | LE, VAN H.; CHU-KUNG, BENJAMIN; KAVALIEROS, JACK T.; PILLARISETTY, RAVI; RACHMADY, WILLY; KENNEL, HAROLD W. |
| 发表日期 | 2017-11-14 |
| 专利号 | US9818884 |
| 著作权人 | INTEL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Strain compensation in transistors |
| 英文摘要 | An embodiment includes a device comprising: a first epitaxial layer, coupled to a substrate, having a first lattice constant; a second epitaxial layer, on the first layer, having a second lattice constant; a third epitaxial layer, contacting an upper surface of the second layer, having a third lattice constant unequal to the second lattice constant; and an epitaxial device layer, on the third layer, including a channel region; wherein (a) the first layer is relaxed and includes defects, (b) the second layer is compressive strained and the third layer is tensile strained, and (c) the first, second, third, and device layers are all included in a trench. Other embodiments are described herein. |
| 公开日期 | 2017-11-14 |
| 申请日期 | 2014-03-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38648]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTEL CORPORATION |
| 推荐引用方式 GB/T 7714 | LE, VAN H.,CHU-KUNG, BENJAMIN,KAVALIEROS, JACK T.,et al. Strain compensation in transistors. US9818884. 2017-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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