Selective layer disordering in III-nitrides with a capping layer
文献类型：专利
| 作者 | WIERER, JR., JONATHAN J.; ALLERMAN, ANDREW A. |
| 发表日期 | 2016-06-14 |
| 专利号 | US9368677 |
| 著作权人 | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Selective layer disordering in III-nitrides with a capping layer |
| 英文摘要 | Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers. |
| 公开日期 | 2016-06-14 |
| 申请日期 | 2014-11-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38666]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC |
| 推荐引用方式 GB/T 7714 | WIERER, JR., JONATHAN J.,ALLERMAN, ANDREW A.. Selective layer disordering in III-nitrides with a capping layer. US9368677. 2016-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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