Optical device structure using GaN substrates for laser applications
文献类型：专利
| 作者 | RARING, JAMES W.; FEEZELL, DANIEL F.; PFISTER, NICHOLAS J.; SHARMA, RAJAT; SCHMIDT, MATHEW C.; ELSASS, CHRISTIANE POBLENZ; CHANG, YU-CHIA |
| 发表日期 | 2017-08-01 |
| 专利号 | US9722398 |
| 著作权人 | SORAA LASER DIODE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical device structure using GaN substrates for laser applications |
| 英文摘要 | An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region. |
| 公开日期 | 2017-08-01 |
| 申请日期 | 2015-06-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38671]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA LASER DIODE, INC. |
| 推荐引用方式 GB/T 7714 | RARING, JAMES W.,FEEZELL, DANIEL F.,PFISTER, NICHOLAS J.,et al. Optical device structure using GaN substrates for laser applications. US9722398. 2017-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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