Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
文献类型:专利
作者 | SZTEIN, ALEXANDER; MCLAURIN, MELVIN; HSU, PO SHAN; RARING, JAMES W. |
发表日期 | 2017-09-05 |
专利号 | US9755398 |
著作权人 | SORAA LASER DIODE, INC. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
英文摘要 | In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width. |
公开日期 | 2017-09-05 |
申请日期 | 2016-06-03 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/38682] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SORAA LASER DIODE, INC. |
推荐引用方式 GB/T 7714 | SZTEIN, ALEXANDER,MCLAURIN, MELVIN,HSU, PO SHAN,et al. Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material. US9755398. 2017-09-05. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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