Method of strain engineering and related optical device using a gallium and nitrogen containing active region
文献类型：专利
| 作者 | RARING, JAMES W.; ELSASS, CHRISTIANE POBLENZ |
| 发表日期 | 2017-02-14 |
| 专利号 | US9570888 |
| 著作权人 | SORAA LASER DIODE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
| 英文摘要 | An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region. |
| 公开日期 | 2017-02-14 |
| 申请日期 | 2016-06-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38685]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA LASER DIODE, INC. |
| 推荐引用方式 GB/T 7714 | RARING, JAMES W.,ELSASS, CHRISTIANE POBLENZ. Method of strain engineering and related optical device using a gallium and nitrogen containing active region. US9570888. 2017-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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