Bond and release layer transfer process
文献类型：专利
| 作者 | HENLEY, FRANCOIS J.; KANG, SIEN; ZHONG, MINGYU; LI, MINGHANG |
| 发表日期 | 2018-12-25 |
| 专利号 | US10164144 |
| 著作权人 | QMAT, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Bond and release layer transfer process |
| 英文摘要 | Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary. Particular embodiments form template blanks of high quality GaN suitable for manufacturing High Brightness-Light Emitting Diode (HB-LED) devices. |
| 公开日期 | 2018-12-25 |
| 申请日期 | 2017-10-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38693]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | QMAT, INC. |
| 推荐引用方式 GB/T 7714 | HENLEY, FRANCOIS J.,KANG, SIEN,ZHONG, MINGYU,et al. Bond and release layer transfer process. US10164144. 2018-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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