Stress compensation type semiconductor laser
文献类型：专利
| 作者 | MIYASHITA, MOTOHARU |
| 发表日期 | 1999-05-11 |
| 专利号 | US5903587 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Stress compensation type semiconductor laser |
| 英文摘要 | A stress compensation type semiconductor laser emitting laser light of 0.98 mu m DIFFERENCE 02 mu m wavelength includes a semiconductor substrate, a cladding layer disposed on the semiconductor substrate, and a multiple quantum well structure active layer disposed on the cladding layer and comprising a plurality of well layers and barrier layers. In the laser, when the number, strain, and thickness of the well layers are n, fw, and tw, respectively, and the number, strain, and thickness of the barrier layers are m, fb, and tb, respectively, the average strain fav of the well layers and the barrier layers, and the total thickness ttotal of the well layers and the barrier layers is given by where upsilon is the Poisson ratio, bo is the magnitude of a Burgers vector of a perfect dislocation, bp is the magnitude of a Burgers vector of partial dislocation, and rc is the half loop radius of a dislocation. Therefore, an active layer having required stress compensation performance is realized with high reliability and high reproducibility. |
| 公开日期 | 1999-05-11 |
| 申请日期 | 1998-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38708]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MIYASHITA, MOTOHARU. Stress compensation type semiconductor laser. US5903587. 1999-05-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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