Semiconductor device and a method for producing the same
文献类型：专利
| 作者 | KUDO, HIROAKI; INOGUCHI, KAZUHIKO; SUGAHARA, SATOSHI; TAKIGUCHI, HARUHISA |
| 发表日期 | 1994-05-03 |
| 专利号 | US5309472 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and a method for producing the same |
| 英文摘要 | A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure. |
| 公开日期 | 1994-05-03 |
| 申请日期 | 1992-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38711]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KUDO, HIROAKI,INOGUCHI, KAZUHIKO,SUGAHARA, SATOSHI,et al. Semiconductor device and a method for producing the same. US5309472. 1994-05-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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