Method of fabricating semiconductor laser
文献类型：专利
| 作者 | FUJIHARA, KIYOSHI; ISHINO, MASATO; TAKENAKA, NAOKI |
| 发表日期 | 1993-07-13 |
| 专利号 | US5227015 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating semiconductor laser |
| 英文摘要 | An n-InP buffer layer 102, an InGaAsP active layer 103, a p-InP cladding layer 104 and a p-InGaAsP surface protective layer 105 are successively epitaxially grown on an n-InP substrate 101 having a (100) plane as a main plane. An etching mask 106, an insulating film, is formed in a stripe in the direction by photolithography and dry etching. Using a solution comprising a mixture of hydrochloric acid, oxygenated water and acetic acid, the n-InP buffer layer 102 is etched to a depth lower than the p-InP cladding layer 103, to form a mesa stripe 107. Next, the insulating film 106 is removed and the p-InGaAsP surface protective layer 105 is removed using a solution comprising a mixture of sulfuric acid and oxygenated water. Thereafter, InP current blocking layers 108 and 109 are selectively formed at the regions other than the mesa stripe 107 by the liquid-phase epitaxial growth. Thus, a buried heterostructure semiconductor laser is fabricated, having good laser characteristics and a high reliability. |
| 公开日期 | 1993-07-13 |
| 申请日期 | 1991-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38724]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | FUJIHARA, KIYOSHI,ISHINO, MASATO,TAKENAKA, NAOKI. Method of fabricating semiconductor laser. US5227015. 1993-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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