Gain-coupling distributed feedback semiconductor and method of producing the same
文献类型：专利
| 作者 | MIZUTANI, NATSUHIKO |
| 发表日期 | 1997-12-30 |
| 专利号 | US5703899 |
| 著作权人 | CANON KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gain-coupling distributed feedback semiconductor and method of producing the same |
| 英文摘要 | There is a phenomenon that, when an epitaxial growth is performed on an uneven surface, such as a periodical surface or grating surface, having surfaces with different surface indices, p- and n-type layer portions can be simultaneously formed depending on growth surface orientations if an impurity such as Si or group IV elements is used. In a gain-coupling distributed feedback laser of the present invention, that phenomenon is utilized, and a current restraint layer, which includes alternately-arranged p- and n-type layer portions, is formed in the vicinity of an active layer. Thus, current is unevenly injected into the active layer, and a periodical gain structure can be established. As a result, a distributed feedback structure is achieved, which performs a gain-coupling operation. |
| 公开日期 | 1997-12-30 |
| 申请日期 | 1996-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38738]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MIZUTANI, NATSUHIKO. Gain-coupling distributed feedback semiconductor and method of producing the same. US5703899. 1997-12-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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