Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor
文献类型：专利
| 作者 | MUKAIHARA, TOSHIKAZU; KASUKAWA, AKIHIKO |
| 发表日期 | 1999-06-22 |
| 专利号 | US5914977 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor |
| 英文摘要 | A reflection multilayer including low-refraction layers and semiconductor layers is formed on the facets of a semiconductor laser. The bandgap energy (Ewg) of a waveguide layer of the reflection multilayer is greater than the bandgap energy (Eac) of an active layer of the semiconductor laser (EacTwg). Further, a photodetector and an optical modulator are formed on the semiconductor laser with the reflection multilayer thereon by butt-Jointing or monolithically by selective vapor growth with use of selective growth masks. Relations Ewg>Emod>Eac>Epd and Twg>Tmod>Tac>Tpd are established between the respective bandgap energies and thicknesses of individual layers, whereby the absorption rate of the reflector waveguide layer and diffraction loss are lowered or reduced, and the rates of optical absorption in an optical absorption layer of the photodetector are increased. |
| 公开日期 | 1999-06-22 |
| 申请日期 | 1997-10-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | MUKAIHARA, TOSHIKAZU,KASUKAWA, AKIHIKO. Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor. US5914977. 1999-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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