Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
文献类型：专利
| 作者 | IMANAKA, KOICHI; IMAMOTO, HIROSHI |
| 发表日期 | 1989-06-13 |
| 专利号 | US4839307 |
| 著作权人 | OMRON TATEISI ELECTRONICS CO. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement |
| 英文摘要 | A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step. |
| 公开日期 | 1989-06-13 |
| 申请日期 | 1987-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38794]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO. |
| 推荐引用方式 GB/T 7714 | IMANAKA, KOICHI,IMAMOTO, HIROSHI. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement. US4839307. 1989-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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