埋込み構造半導体レーザ
文献类型：专利
| 作者 | 麻多 進 |
| 发表日期 | 1998-05-15 |
| 专利号 | JP2780275B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 埋込み構造半導体レーザ |
| 英文摘要 | PURPOSE:To reduce leak current to almost zero, and realize oscillation of high efficiency by arranging a band gap barrier layer between a current flowing part and a current blocking layer, which barrier layer has always a forbidden bandwidth larger than that of an active layer and that of a clad layer. CONSTITUTION:A mesa type current flowing part, in which an active layer 11 is sandwiched by a P-type clad layer 12 and an N-type clad layer 13, is filled with a current blocking layer 14 composed of a semiconductor layer having a deep impurity level. A current blocking layer 15, in which forbidden bandwidth of the parts in contact with the region 11 and the clad layer 12 is always larger than that of region 11 and that of the clad layer 12, is formed. Even in the case where the difference of the forbidden bandwidth at the interface of the part 15 is small, the interface sufficiently operates as a barrier, if only the difference is room temperature energy 0.025eV or more. As a result, leak current component is remarkably reduced. Thereby the leak current becomes almost zero, and oscillation of high efficiency is realized. |
| 公开日期 | 1998-07-30 |
| 申请日期 | 1988-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38799]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 麻多 進. 埋込み構造半導体レーザ. JP2780275B2. 1998-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。