Hole blocking layers in non-polar and semi-polar green light emitting devices
文献类型：专利
| 作者 | BHAT, RAJARAM; SIZOV, DMITRY S.; ZAH, CHUNG-EN |
| 发表日期 | 2013-02-19 |
| 专利号 | US8379684 |
| 著作权人 | THORLABS QUANTUM ELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Hole blocking layers in non-polar and semi-polar green light emitting devices |
| 英文摘要 | Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region. |
| 公开日期 | 2013-02-19 |
| 申请日期 | 2011-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38806]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THORLABS QUANTUM ELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | BHAT, RAJARAM,SIZOV, DMITRY S.,ZAH, CHUNG-EN. Hole blocking layers in non-polar and semi-polar green light emitting devices. US8379684. 2013-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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