Method for producing a distributed feedback semiconductor laser device
文献类型：专利
| 作者 | INOGUCHI, KAZUHIKO; SUGAHARA, SATOSHI; TANEYA, MOTOTAKA; KUDO, HIROAKI; NAKANISHI, CHITOSE; TAKIGUCHI, HARUHISA |
| 发表日期 | 1994-03-08 |
| 专利号 | US5292685 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing a distributed feedback semiconductor laser device |
| 英文摘要 | In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer. |
| 公开日期 | 1994-03-08 |
| 申请日期 | 1992-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38816]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | INOGUCHI, KAZUHIKO,SUGAHARA, SATOSHI,TANEYA, MOTOTAKA,et al. Method for producing a distributed feedback semiconductor laser device. US5292685. 1994-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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