供光電裝置用的氧化鎵塗層
文献类型：专利
| 作者 | NILOY KUMAR DUTTA; RUSSEL J. FISCHER; NEIL EDMUND JAMES HUNT; MATTHIAS PASSLACK; ERDMANN FREDERICK SCHUBERT; GEORGE JOHN ZYDZIK |
| 发表日期 | 2000-03-31 |
| 专利号 | HK1003439A1 |
| 著作权人 | AT & T CORP. |
| 国家 | 中国香港 |
| 文献子类 | 授权发明 |
| 其他题名 | 供光電裝置用的氧化鎵塗層 |
| 英文摘要 | An optoelectronic III-V or II-VI semiconductor device comprises a thin film coating with optical characteristics providing low midgap interface state density. A field effect device for inversion channel applications on III-V semiconductors also comprises a thin dielectric film providing required interface characteristics. The thin film is also applicable to passivation of states on exposed surfaces of electronic III-V devices. The thin film comprises a uniform, homogeneous, dense, stoichiometric gallium oxide (Ga₂O₃) dielectric thin film, fabricated by electron-beam evaporation of a single crystal, high purity Gd₃Ga₅O₁₂ complex compound on semiconductor substrates kept at temperatures ranging from 40 to 370°C and at background pressures at or above 1x10⁻¹⁰ Torr. |
| 公开日期 | 2000-03-31 |
| 申请日期 | 1998-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38982]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT & T CORP. |
| 推荐引用方式 GB/T 7714 | NILOY KUMAR DUTTA,RUSSEL J. FISCHER,NEIL EDMUND JAMES HUNT,等. 供光電裝置用的氧化鎵塗層. HK1003439A1. 2000-03-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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