Integrated laser diodes with quality facets on GaN substrates
文献类型：专利
| 作者 | RARING, JAMES W.; FEEZELL, DANIEL F. |
| 发表日期 | 2014-07-01 |
| 专利号 | US8767787 |
| 著作权人 | SORAA LASER DIODE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated laser diodes with quality facets on GaN substrates |
| 英文摘要 | A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. |
| 公开日期 | 2014-07-01 |
| 申请日期 | 2012-07-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38984]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA LASER DIODE, INC. |
| 推荐引用方式 GB/T 7714 | RARING, JAMES W.,FEEZELL, DANIEL F.. Integrated laser diodes with quality facets on GaN substrates. US8767787. 2014-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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