多波長半導体レーザダイオード
文献类型：专利
| 作者 | 宮澤 丈夫; 永沼 充 |
| 发表日期 | 1998-08-28 |
| 专利号 | JP2819160B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 多波長半導体レーザダイオード |
| 英文摘要 | PURPOSE:To enable simple manufacture without increasing threshold current by sandwiching a first semiconductor layer which comprises a light emitting layer, between second and third semiconductor layers, and dividing the first semiconductor layer into regions which are non-mixed crystal and mixed crystal quantum wells. CONSTITUTION:A quantum well laser structure is grown by a molecular beam epitaxial growth process. A silicon nitride film is laminated thereon based on the plasma CVD process and removed, allowing the silicon nitride film 17 to remain in a region 16 which is made to be mixed crystals. Then, the growth surface is subjected to quick heating in a furnace, and cooled directly when it has reached the temperature of 980 deg.C. The repetition of this process causes the quantum well in the region 16 covered with the silicon nitride film to be mixed crystals so that transition energy of electrons may be increased. Then, the silicon nitride film 17 and a heat treatment protection layer 15 are eliminated, and a cap layer 14 is etched so that a stripe may remain. Next, a silicon nitride film 18 is laminated where a window having a width of 10mum is opened so as to form an n-type ohmic electrode 19 and a p-type ohmic electrode 20, an end face. Then, a laser diode is obtained. |
| 公开日期 | 1998-10-30 |
| 申请日期 | 1989-08-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38990]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 宮澤 丈夫,永沼 充. 多波長半導体レーザダイオード. JP2819160B2. 1998-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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