Semiconductor double heterostructure laser device with InP current blocking layer
文献类型：专利
| 作者 | IRIKAWA, MICHINORI; IWASE, MASAYUKI |
| 发表日期 | 1994-06-07 |
| 专利号 | US5319661 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor double heterostructure laser device with InP current blocking layer |
| 英文摘要 | A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics. |
| 公开日期 | 1994-06-07 |
| 申请日期 | 1993-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38991]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | IRIKAWA, MICHINORI,IWASE, MASAYUKI. Semiconductor double heterostructure laser device with InP current blocking layer. US5319661. 1994-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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