半導体量子井戸レーザ
文献类型：专利
| 作者 | 岩田 普 |
| 发表日期 | 1999-02-26 |
| 专利号 | JP2890505B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体量子井戸レーザ |
| 英文摘要 | PURPOSE:To facilitate the formation of a (111) quantum well layer, and easily obtain a low-threshold laser with superior reproducibility, by arranging an active layer constituted of one or more inclined quantum well layers of face orientation (111), in a multilayer structure formed on a (001) face inclined substrate. CONSTITUTION:On a substrate 10 constituted of N-type GaAs inclined at 2 deg. to the direction from a (001) face to a (111) face, the following are formed; an N-clad layer 11 constituted of P-Al0.7Ga0.3As, an optical guide layer 12 constituted of N-Al0.3Ga0.7As, an active layer 15, an optical guide layer 16 constituted of P-Al0.3Ga0.7As, a P-clad layer 17 constituted of P-Al0.7Ga0.3As, and a cap layer 18 constituted of P-GaAs. The above active layer 15 is constituted of an inclined quantum well layer 13 formed by (GaAs)0.475 (Al0.2Ga0.8As)0.5 fraction atomic layer growth and a quantum barrier layer 14. Said layer 13 is a quantum layer wherein the layer face is inclined to the face of the base clad layer 1 A P-electrode 19 is formed on the layer 18, and an N-electrode 20 is formed on the lower surface of the substrate 10. |
| 公开日期 | 1999-05-17 |
| 申请日期 | 1989-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39006]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 岩田 普. 半導体量子井戸レーザ. JP2890505B2. 1999-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。