Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film
文献类型：专利
| 作者 | JONES, KENNETH A.; LEE, HOWARD S. |
| 发表日期 | 1994-09-13 |
| 专利号 | US5346856 |
| 著作权人 | UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE SECRETARY OF THE ARMY. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film |
| 英文摘要 | A method for producing a buried heterostructure active devices and a passive waveguide by providing a heterostructure substrate such as a superlattice having at least one planar GaAs layer and at least one AlGaAs layer adjacent to it. A single crystal germanium layer is epitaxially deposited on the superlattice substrate. A layer of gold is deposited on the germanium layer. The gold and germanium layers are imagewise patterned and selected portions etched away. The patterned substrate is encapsulated in a compatible, heat resistant encapsulating material. The encapsulated substrate is then annealed at a temperature of up to about 350 DEG C. |
| 公开日期 | 1994-09-13 |
| 申请日期 | 1993-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39012]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE SECRETARY OF THE ARMY. |
| 推荐引用方式 GB/T 7714 | JONES, KENNETH A.,LEE, HOWARD S.. Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film. US5346856. 1994-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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