Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device
文献类型：专利
| 作者 | LUTH, HANS; MULLER, HARALD D.; SCHNEIDER, JURGEN; STRUMPLER, RALF |
| 发表日期 | 1993-09-28 |
| 专利号 | US5248890 |
| 著作权人 | FORSCHUNGSZENTRUM JULICH GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device |
| 英文摘要 | An optoelectronic device, e.g. for integrated circuits, has an Si, II-VI or III/V semiconductor layer and an LaF3 or La1-xXxF3 insulating layer which is doped with Nd or Er to generate an optical signal whose wavelength is determined by the 4f ions used. The insulating layer can be grown epitaxially on the semiconductor layer and the lanthanide element ion substituting for a metal ion of the material forming the insulating layer has the same valence as the metal for which it is substituted. |
| 公开日期 | 1993-09-28 |
| 申请日期 | 1991-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39031]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FORSCHUNGSZENTRUM JULICH GMBH |
| 推荐引用方式 GB/T 7714 | LUTH, HANS,MULLER, HARALD D.,SCHNEIDER, JURGEN,et al. Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device. US5248890. 1993-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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