レーザダイオード
文献类型：专利
| 作者 | 田中 治夫; 中田 直太郎 |
| 发表日期 | 1996-08-08 |
| 专利号 | JP2547465B2 |
| 著作权人 | ローム株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | レーザダイオード |
| 英文摘要 | PURPOSE:To enable a cleavage plane to be flattened and resistance against environment to be improved by placing a transparent member in front of a front cleavage plane of a laser diode chip and filling a transparent, resin between them. CONSTITUTION:A transparent plate 11 which consists of a glass or a plastic is placed on a substrate 2 which is in front of a laser diode chip 9, a transparent resin 12 is filled between this transparent plate 11 and a front cleavage surface 9a, and it is spread to the rear of the chip 9, thus constituting a solid waveguide path 12a which connects a rear cleavage surface 9b and a monitor element 7. Further. a protection resin layer 13 is formed on the substrate 2 and a submount 3 and wires W1-W3, etc., ate coated and protected. Laser beam which is emitted from the front cleavage surface 9a is transmitted through the transparent resin 12 and the transparent plate 11 and is discharged from a flat front surface 11a of the transparent plate 1 Light advances through the solid waveguide path 12a, is reflected by the transparent resin 12, the protection resin 13, and the boundary surface with the protection resin 13, and is received by a monitor element 7. |
| 公开日期 | 1996-10-23 |
| 申请日期 | 1990-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39033]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ローム株式会社 |
| 推荐引用方式 GB/T 7714 | 田中 治夫,中田 直太郎. レーザダイオード. JP2547465B2. 1996-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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