中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Encased semiconductor laser device in contact with a fluid and method of producing the laser device

文献类型:专利

作者TAKAGI, KAZUHISA
发表日期2002-05-28
专利号US6396854
著作权人MITSUBISHI DENKI KABUSHIKI KAISHA
国家美国
文献子类授权发明
其他题名Encased semiconductor laser device in contact with a fluid and method of producing the laser device
英文摘要At least part of the waveguide of a laser, the waveguide including a first cladding layer, an active layer, and a second cladding layer of a second conductivity type, and, for a ridge type laser, a ridge in the second cladding layer, has a width such that light leaks from the side walls of the waveguide. A case encloses the side walls of the waveguide and a fluid having a refractive index is sealed in the case in contact with the side walls of the waveguide. A characteristic of the laser can be adjusted easily. Therefore a laser having a uniform characteristic can be provided at a low cost. This laser is useful as a light source for wavelength multiplex transmission used for optical transmission, of a main line system, such as a submarine cable.
公开日期2002-05-28
申请日期2000-06-13
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/39080]  
专题半导体激光器专利数据库
作者单位MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
TAKAGI, KAZUHISA. Encased semiconductor laser device in contact with a fluid and method of producing the laser device. US6396854. 2002-05-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

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