Encased semiconductor laser device in contact with a fluid and method of producing the laser device
文献类型:专利
作者 | TAKAGI, KAZUHISA |
发表日期 | 2002-05-28 |
专利号 | US6396854 |
著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Encased semiconductor laser device in contact with a fluid and method of producing the laser device |
英文摘要 | At least part of the waveguide of a laser, the waveguide including a first cladding layer, an active layer, and a second cladding layer of a second conductivity type, and, for a ridge type laser, a ridge in the second cladding layer, has a width such that light leaks from the side walls of the waveguide. A case encloses the side walls of the waveguide and a fluid having a refractive index is sealed in the case in contact with the side walls of the waveguide. A characteristic of the laser can be adjusted easily. Therefore a laser having a uniform characteristic can be provided at a low cost. This laser is useful as a light source for wavelength multiplex transmission used for optical transmission, of a main line system, such as a submarine cable. |
公开日期 | 2002-05-28 |
申请日期 | 2000-06-13 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/39080] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | TAKAGI, KAZUHISA. Encased semiconductor laser device in contact with a fluid and method of producing the laser device. US6396854. 2002-05-28. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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