Long, high-power semiconductor laser with shifted-wave and passivated output facet
文献类型：专利
| 作者 | BALIGA, ARVIND; FLANDERS, DALE C.; SALVATORE, RANDAL |
| 发表日期 | 2003-02-11 |
| 专利号 | US6519272 |
| 著作权人 | CORNING INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Long, high-power semiconductor laser with shifted-wave and passivated output facet |
| 英文摘要 | A semiconductor electro-optical device such as a laser or modulator comprises a ridge of active and wave-guiding semiconductor layers extending between two facets. In the preferred embodiment, cavity length is relatively long, i.e., the facets are separated by greater than a millimeter. This lowers the current densities in the ridge for the same output beam power. Further, an oxygen-free passivation layer is continuously formed over at least one of the facets to prevent surface corrosion and avoid electrical surface traps. However, a standing-wave-shifted coating is further used on the facet with the passivation layer to reduce the electric field magnitude in the passivation layer. |
| 公开日期 | 2003-02-11 |
| 申请日期 | 2000-10-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39091]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CORNING INCORPORATED |
| 推荐引用方式 GB/T 7714 | BALIGA, ARVIND,FLANDERS, DALE C.,SALVATORE, RANDAL. Long, high-power semiconductor laser with shifted-wave and passivated output facet. US6519272. 2003-02-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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