Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
文献类型：专利
| 作者 | HONG, MINGHWEI; KORTAN, AHMET REFIK; KWO, JUEINAI RAYNIEN; MANNAERTS, JOSEPH PETRUS |
| 发表日期 | 2002-10-22 |
| 专利号 | US6469357 |
| 著作权人 | AGERE SYSTEMS GUARDIAN CORP. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Article comprising an oxide layer on a GaAs or GaN-based semiconductor body |
| 英文摘要 | We have found that a single crystal, single domain oxide layer of thickness less than 5 nm can be grown on a (100) oriented GaAs-based semiconductor substrate. Similar epitaxial oxide can be grown on GaN and GaN-based semiconductors. The oxide typically is a rare earth oxide of the Mn2 0 3 structure (e.g., Gd2O3). The oxide/semiconductor interface can be of high quality, with low interface state density, and the oxide layer can have low leakage current and high breakdown voltage. The low thickness and high dielectric constant of the oxide layer result in a MOS structure of high capacitance per unit area. Such a structure advantageously forms a GaAs-based MOS-FET. |
| 公开日期 | 2002-10-22 |
| 申请日期 | 1998-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39108]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGERE SYSTEMS GUARDIAN CORP. |
| 推荐引用方式 GB/T 7714 | HONG, MINGHWEI,KORTAN, AHMET REFIK,KWO, JUEINAI RAYNIEN,et al. Article comprising an oxide layer on a GaAs or GaN-based semiconductor body. US6469357. 2002-10-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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